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講壇題目：Oxides with high dielectric permittivity and their application in integrated electronic

主講人：DmitriyGolosov副教授

講座時間：2023年5月8日，14:30-16:30

講座地點：工7-412

主辦單位：研究生院

承辦單位：光電工程學院

摘要：

The presentation discusses the problems of scaling modern integrated circuits and the use of silicon oxide in MOS structures. The requirements for materials for use as a gate dielectric of MOSFET transistors are determined. The properties and features of the formation of films of high-k dielectrics based on simple and complex oxides are considered.

個人簡介(resume)：

DmitriyGolosov,PhD,associateprofessor,leadingreseacherofPlasmaProcessingResearchCenter,BelarusianStateUniversityofInformaticsandRadioelectronics.